Part Number | IPI12CNE8N G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 85V 67A TO262-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 85V |
Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 83µA |
Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4340pF @ 40V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 12.6 mOhm @ 67A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IPI12CNE8N G
INFIENON
7506
0.63
MY Group (Asia) Limited
IPI12CNE8N G
Infinen
8541
1.2625
G Trader Limited
IPI12CN10NG
INFLNEON
5989
1.895
Bonase Electronics (HK) Co., Limited
IPI12CN10NG
Infineon Technologies A...
3943
2.5275
Hong Kong In Fortune Electronics Co., Limited
IPI12CN10N G
INFINEON/IR
3919
3.16
MY Group (Asia) Limited