Part Number | IPI35CN10N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 27A TO262-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 29µA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1570pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 58W (Tc) |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 27A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IPI35CN10N G
INFIENON
4221
0.16
MY Group (Asia) Limited
IPI35CN10N G
Infinen
9650
0.84
G Trader Limited
IPI35CN10N
INFLNEON
2912
1.52
Inchange Semiconductor Company Limited