Part Number | IPL60R199CP |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 16.4A 4VSON |
Series | CoolMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 16.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 660µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1520pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 139W (Tc) |
Rds On (Max) @ Id, Vgs | 199 mOhm @ 9.9A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-VSON-4 |
Package / Case | 4-PowerTSFN |
Image |
IPL60R199CP
INFIENON
4500
1.83
Shenzhen Hongying Micro Technology Co., Ltd
IPL60R199CP
Infinen
3636
2.76
Nosin (HK) Electronics Co.
IPL60R199CP
INFLNEON
3067
3.69
HONGKONG SINIKO ELECTRONIC LIMITED
IPL60R199CP
Infineon Technologies A...
6210
4.62
N&S Electronic Co., Limited
IPL60R199CP
INFINEON/IR
6709
5.55
Xiefeng (HK) INT'L Electronics Limited