Part Number | IPL60R2K1C6SATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 8TSON |
Series | CoolMOS,C6 |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 60µA |
Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 21.6W (Tc) |
Rds On (Max) @ Id, Vgs | 2.1 Ohm @ 760mA, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Thin-PAK (5x6) |
Package / Case | 8-PowerTDFN |
Image |
IPL60R2K1C6SATMA1
INFIENON
4718
0.14
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPL60R2K1C6SATMA1
Infinen
3292
1.565
Cinty Int'l (HK) Industry Co., Limited
IPL60R2K1C6SATMA1
INFLNEON
3172
2.99
Viassion Technology Co., Limited
IPL60R2K1C6SATMA1
Infineon Technologies A...
8682
4.415
N&S Electronic Co., Limited
IPL60R2K1C6SATMA1
INFINEON/IR
841
5.84
MY Group (Asia) Limited