Part Number | IPP023N08N5AKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH TO220-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.8V @ 208µA |
Gate Charge (Qg) (Max) @ Vgs | 166nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 12100pF @ 40V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 2.3 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
IPP023N08N5AKSA1
INFIENON
384
0.2
Digchip Technology Co.,Limited
IPP023N08N5AKSA1
Infinen
6548
1.165
MY Group (Asia) Limited
IPP023N08N5AKSA1
INFLNEON
2842
2.13
HONG KONG LION ELECTRONIC LIMITED
IPP023N08N5AKSA1
Infineon Technologies A...
1163
3.095
C-March Electronics Co.,Ltd
IPP023N04NG
INFINEON/IR
9320
4.06
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd