Part Number | IPP048N12N3 G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 120V 100A TO220-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 120V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 230µA |
Gate Charge (Qg) (Max) @ Vgs | 182nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 12000pF @ 60V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |
Image |
IPP048N12N3 G
INFIENON
6000
1.41
Shenzhen Qiangneng Electronics Co., Ltd.
IPP048N12N3 G
Infinen
3540
2.6375
ONSTAR ELECTRONICS CO., LIMITED
IPP048N12N3 G
INFLNEON
2350
3.865
UCAN TRADE (HK) LIMITED
IPP048N12N3 G
Infineon Technologies A...
29500
5.0925
CIS Ltd (CHECK IC SOLUTION LIMITED)
IPP048N12N3 GS
INFINEON/IR
41000
6.32
N&S Electronic Co., Limited