Part Number | IPP05CN10NGXKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 100A TO-220 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 181nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 12000pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 5.4 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
IPP05CN10NGXKSA1
INFIENON
1025
0.83
MY Group (Asia) Limited
IPP05CN10L G
Infinen
2459
1.9375
MY Group (Asia) Limited
IPP05CN10NG
INFLNEON
1803
3.045
Hong Kong In Fortune Electronics Co., Limited
IPP05CN10N G
Infineon Technologies A...
4589
4.1525
Yu Hong Technologies Limited
IPP05CN10NG
INFINEON/IR
8013
5.26
C&G Electronics (HK) Co., Ltd