Part Number | IPP06CN10N G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 100A TO-220 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 180µA |
Gate Charge (Qg) (Max) @ Vgs | 139nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9200pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 214W (Tc) |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
IPP06CN10N
INFIENON
19000
0.45
HK HEQING ELECTRONICS LIMITED
IPP06CN10N G
Infinen
5870
1.6625
AIC Semiconductor Co., Limited
IPP06CN10N G
INFLNEON
55200
2.875
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
IPP06CN10N
Infineon Technologies A...
27661
4.0875
NEW IDEAS INDUSTRIAL CO., LIMITED
IPP06CN10N G
INFINEON/IR
5500
5.3
Cicotex Electronics (HK) Limited