Part Number | IPP072N10N3GHKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 80A TO220-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4910pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 7.2 mOhm @ 80A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
IPP072N10N3GHKSA1
INFIENON
1000
0.06
MY Group (Asia) Limited
IPP072N10N3GHKSA1
Infinen
5988
1.2525
Dedicate Electronics (HK) Limited
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INFLNEON
15860
2.445
FantastIC Sourcing
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Infineon Technologies A...
19049
3.6375
JFJ Electronics Co.,Limited
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3000
4.83
RX ELECTRONICS LIMITED