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Description
GENERAL DESCRIPTION. The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear. Devices enhanced ACMOS silicon gate CMOS process. It consists of an. INFINEONS POWER SEMICONDUCTOR PHILOSOPHY is rather simple: if we invest in development of a new power semiconductor product, it must be substantially superior to any comparable competitor power semiconductor. For the past seven years, Infineons power semiconductors . CoolMOSTM Super Junction
| Part Number | IPP096N03L |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 30V 35A TO-220-3 |
| Series | OptiMOS |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 15V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Rds On (Max) @ Id, Vgs | 9.6 mOhm @ 30A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
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