Part Number | IPP12CN10N G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 67A TO-220 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 83µA |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4320pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 12.9 mOhm @ 67A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
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IPP12CN10N G
INFIENON
22000
0.9
CIS Ltd (CHECK IC SOLUTION LIMITED)
IPP12CN10N
Infinen
5930
1.7025
Dedicate Electronics (HK) Limited
IPP12CN10N G
INFLNEON
1000
2.505
MY Group (Asia) Limited
IPP12CN10N G
Infineon Technologies A...
5000
3.3075
G Trader Limited
IPP12CN10N G
INFINEON/IR
1060
4.11
Cicotex Electronics (HK) Limited