Part Number | IPP16CN10NGHKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V TO-220 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 61µA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3220pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Rds On (Max) @ Id, Vgs | 16.5 mOhm @ 53A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
IPP16CN10NGHKSA1
INFIENON
5000
0.87
Shenzhenshi Zhongyiyingtong Technology Co.,Ltd
IPP16CN10NGHKSA1
Infinen
5242
2.1175
Sun Kai Wah ( H.K. ) Electronics Co.
IPP16CN10NGHKSA1
INFLNEON
5920
3.365
Dedicate Electronics (HK) Limited
IPP16CN10NGHKSA1
Infineon Technologies A...
1000
4.6125
MY Group (Asia) Limited
IPP16CN10NG
INFINEON/IR
4500
5.86
Yingxinyuan INT'L (Group) Limited