Description
DATASHEET Jun 7, 2013 2. 600V CoolMOS P6 Power Transistor. IPP60R190P6 . Rev. 2.0, 2013-06-07. Final Data Sheet tab. TO-220. Drain. Pin 2, tab. Gate. Pin 1. May 5, 2014 600V CoolMOS P6 Power Transistor. IPW60R190P6, IPB60R190P6, IPP60R190P6 ,. IPA60R190P6. Rev. 2.2, 2015-07-10. Final Data Sheet. 300W PFC Evaluation Board IPP60R190P6 with CCM PFC controller ICE3PCS01G. 2. Application Note AN 2013-03. V1.0 03 2013. Edition 2011-02- 02. Da ta shee tlimitation +30 V. 50. 40. 30. 20. 10. 0. -10. -20. -30. -40. -50. 10. 20. 30. 40. 50. 60. IPP60R199CP. IPP60R190E6. IPP60R190P6 . CoolMOS E6. Oct 9, 2015 technology IPP60R190P6 600V Power MOSFET on the primary side and 600W 12 V LLC analog version with CoolMOS P6, IPP60R190P6
Part Number | IPP60R190P6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 600V 20.2A TO220 |
Series | CoolMOS,P6 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 630µ |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1750pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 151W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
Hot Offer
IPP60R190P6
INFINEON/IR
4800
4.94
Kang Da Electronics Co.
IPP60R190P6
INFIENON
60000
0.9
HK KK Int'l Co.,Limited
IPP60R190P6
Infinen
305
1.91
Yingxinyuan INT'L (Group) Limited
IPP60R190P6
INFLNEON
11003
2.92
Ande Electronics Co., Limited
IPP60R190P6
Infineon Technologies A...
41512
3.93
N&S Electronic Co., Limited