Part Number | IPP60R299CPXKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 11A TO-220 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 440µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 96W (Tc) |
Rds On (Max) @ Id, Vgs | 299 mOhm @ 6.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
IPP60R299CPXKSA1
INFIENON
5854
0.33
Dedicate Electronics (HK) Limited
IPP60R299CPXKSA1
Infinen
1000
0.9875
REALCHIP TECHNOLOGY (HK) CO., LIMITED
IPP60R299CPXKSA1
INFLNEON
15000
1.645
MY Group (Asia) Limited
IPP60R299CPXKSA1
Infineon Technologies A...
9460
2.3025
Viassion Technology Co., Limited
IPP60R040C7
INFINEON/IR
50
2.96
Yingxinyuan INT'L (Group) Limited