Part Number | IPP65R074C6XKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 57.7A TO220 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 57.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1.4mA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3020pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 480.8W (Tc) |
Rds On (Max) @ Id, Vgs | 74 mOhm @ 13.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
IPP65R074C6XKSA1
INFIENON
220360
1.2
Cinty Int'l (HK) Industry Co., Limited
IPP65R074C6XKSA1
Infinen
1000
2.0225
STH Electronics Co.,Ltd
IPP65R074C6XKSA1
INFLNEON
1000
2.845
Yingxinyuan INT'L (Group) Limited
IPP65R074C6XKSA1
Infineon Technologies A...
4585
3.6675
NEW IDEAS INDUSTRIAL CO., LIMITED
IPP65R074C6XKSA1
INFINEON/IR
11010
4.49
Ande Electronics Co., Limited