Part Number | IPP65R110CFDAAKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V TO-220-3 |
Series | Automotive, AEC-Q101, CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
Gate Charge (Qg) (Max) @ Vgs | 118nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3240pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 277.8W (Tc) |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 12.7A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
IPP65R110CFDAAKSA1
INFIENON
7358
0.33
Shine Ever (Hong Kong) Co,.Ltd
IPP65R110CFDAAKSA1
Infinen
1000
1.265
MY Group (Asia) Limited
IPP65R190CFD
INFLNEON
480
2.2
FantastIC Sourcing
IPP65R045C7
Infineon Technologies A...
2700
3.135
Yingxinyuan INT'L (Group) Limited
IPP65R110CFD
INFINEON/IR
2265
4.07
HK TWO L ELECTRONIC LIMITED