Part Number | IPP65R125C7XKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 18A TO220 |
Series | CoolMOS,C7 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 440µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1670pF @ 400V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 101W (Tc) |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 8.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
IPP65R125C7XKSA1
INFIENON
338
1.47
MASTERS Sp. zoo.
IPP65R125C7XKSA1
Infinen
16
2.66
TLF ELECTRONICS LTD
IPP65R125C7XKSA1
INFLNEON
14000
3.85
MY Group (Asia) Limited
IPP65R125C7XKSA1
Infineon Technologies A...
8000
5.04
YK TECH ELECTRONIC CO., LIMITED
IPP65R125C7XKSA1
INFINEON/IR
49685
6.23
Ande Electronics Co., Limited