Part Number | IPP80N06S208AKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 55V 80A TO220-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2860pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 215W (Tc) |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 58A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |
Image |
IPP80N06S208AKSA1
INFIENON
19000
0.7
Digchip Technology Co.,Limited
IPP80N06S208AKSA1
Infinen
1000
1.805
MY Group (Asia) Limited
IPP80N03S4L04AKSA1
INFLNEON
1000
2.91
MY Group (Asia) Limited
IPP80N06S208
Infineon Technologies A...
10000
4.015
Daejon Electronics
IPP80N06S2-09
INFINEON/IR
1000
5.12
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd