Part Number | IPP80N06S2L11AKSA2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 55V 80A TO220-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 93µA |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2075pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 158W (Tc) |
Rds On (Max) @ Id, Vgs | 10.7 mOhm @ 40A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |
Image |
IPP80N06S2L11AKSA2
INFIENON
1000
0.51
MY Group (Asia) Limited
IPP80N06S2L11AKSA2
Infinen
10377
1.3825
Viassion Technology Co., Limited
IPP80N06S2L11AKSA2
INFLNEON
220360
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Cinty Int'l (HK) Industry Co., Limited
IPP80N06S2L11AKSA2
Infineon Technologies A...
36819
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Hlinsemi Electronics (HongKong) Co., Limited
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INFINEON/IR
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CIS Ltd (CHECK IC SOLUTION LIMITED)