Part Number | IPS65R1K0CEAKMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 4.3A TO-251-3 |
Series | CoolMOS,CE |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 15.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 328pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 37W (Tc) |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 1.5A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251 |
Package / Case | TO-251-3 Stub Leads, IPak |
Image |
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