Part Number | IPS65R950C6AKMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 4.5A TO-251 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 15.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 328pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 37W (Tc) |
Rds On (Max) @ Id, Vgs | 950 mOhm @ 1.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO251-3 |
Package / Case | TO-251-3 Stub Leads, IPak |
Image |
IPS65R950C6AKMA1
INFIENON
220360
0.43
Cinty Int'l (HK) Industry Co., Limited
IPS65R950C6AKMA1
Infinen
14714
1.615
Viassion Technology Co., Limited
IPS65R950C6AKMA1
INFLNEON
9630
2.8
Acort Co., Limited
IPS65R950C6AKMA1
Infineon Technologies A...
35200
3.985
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPS65R950C6AKMA1
INFINEON/IR
21000
5.17
Nosin (HK) Electronics Co.