Part Number | IPT60R028G7XTMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 75A HSOF-8 |
Series | CoolMOS,G7 |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1.44mA |
Gate Charge (Qg) (Max) @ Vgs | 123nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4820pF @ 400V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 391W (Tc) |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 28.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-HSOF-8 |
Package / Case | 8-PowerSFN |
Image |
IPT60R028G7XTMA1
INFIENON
33900
0.51
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPT60R028G7XTMA1
Infinen
1000
1.8225
Bonase Electronics (HK) Co., Limited
IPT60R028G7XTMA1
INFLNEON
220360
3.135
Cinty Int'l (HK) Industry Co., Limited
IPT60R028G7XTMA1
Infineon Technologies A...
3000
4.4475
HONGKONG SINIKO ELECTRONIC LIMITED
IPT60R028G7XTMA1
INFINEON/IR
12000
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Ande Electronics Co., Limited