Part Number | IPW50R190CE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 500V 18.5A TO247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 18.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 13V |
Vgs(th) (Max) @ Id | 3.5V @ 510µA |
Gate Charge (Qg) (Max) @ Vgs | 47.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1137pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | Super Junction |
Power Dissipation (Max) | 127W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 6.2A, 13V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
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