Part Number | IPW60R075CP |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 39A TO-247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1.7mA |
Gate Charge (Qg) (Max) @ Vgs | 116nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 313W (Tc) |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 26A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
Hot Offer
IPW60R075CP
INFINEON/IR
12650
2.06
Cinty Int'l (HK) Industry Co., Limited
IPW60R075CP
INFIENON
2688
0.33
Shenzhen Hongying Micro Technology Co., Ltd
IPW60R075CP
Infinen
21837
0.7625
Useta Tech (HK) Limited
IPW60R075CP
INFLNEON
13133
1.195
HK HEQING ELECTRONICS LIMITED
IPW60R075CP
Infineon Technologies A...
15000
1.6275
Shenzhen Tecrutter Technology Co. , Ltd.