Part Number | IPW60R125C6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 600V 30A TO247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 960µA |
Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2127pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 219W (Tc) |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 14.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
IPW60R125C6
INFIENON
30000
1.7
Superior Electronics Limited
IPW60R125C6
Infinen
3600
2.8775
Hongkong Yunling Electronics Co.,Limited
IPW60R125C6
INFLNEON
1030
4.055
FLOWER GROUP(HK)CO.,LTD
IPW60R125C6
Infineon Technologies A...
300
5.2325
RX ELECTRONICS LIMITED
IPW60R125C6
INFINEON/IR
3200
6.41
HongKong Trusang Technology Co.,Ltd