Part Number | IPW60R125P6XKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 600V TO247-3 |
Series | CoolMOS,P6 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 960µA |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2660pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 219W (Tc) |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 11.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
IPW60R125P6XKSA1
INFIENON
9648
0.99
TLF ELECTRONICS LTD
IPW60R125P6XKSA1
Infinen
9696
2.1825
MY Group (Asia) Limited
IPW60R125P6XKSA1
INFLNEON
9486
3.375
YK TECH ELECTRONIC CO., LIMITED
IPW60R125P6XKSA1
Infineon Technologies A...
2271
4.5675
ASIAWAY (H.K.) LIMITED
IPW60R125P6XKSA1
INFINEON/IR
2283
5.76
Yataitong Electronic Technology Co., Limited