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Description
IPW60R280E6 . Final Data Sheet. 2. Rev. 2.2, 2014-12-09. 1. Description. CoolMOS# is a revolutionary technology for high voltage power. MOSFETs, designed 1. 2. 3. Material Content Data Sheet. Sales Product Name. IPW60R280E6 . Issued . 29. August 2013. MA#. MA001076896. Package. PG-TO247-3-44. Weight*. PB15N60C3. IPB60R280C6. S. PP15N60C3. IPP60R280E6. S. P. A15N60C3. IP . A60R280E6. S. PI15N60C3. IPI60R280C6. S. PW15N60C3. IPW60R280E6 . IPW60R280E6 . 190. IPP60R190E6. IPA60R190E6. IPW60R190E6. Published by . Infineon Technologies Austria AG. 9500 Villach, Austria. 2014 Infineon IPP60R280E6. IPA60R280E6. IPW60R280E6 . 190. IPP60R190E6. IPA60R190E6. IPW60R190E6. CoolMOS C6 650V. 1400. IPS65R1k4C6. IPD65R1k4C6.
| Part Number | IPW60R280E6 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 600V 13.8A TO247 |
| Series | CoolMOS |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 430µA |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 100V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Rds On (Max) @ Id, Vgs | 280 mOhm @ 6.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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