Rated 
(5/5) based on 16 customer reviews
(5/5) based on 16 customer reviews
| Part Number | IPW65R041CFD |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N CH 650V 68.5A PG-TO247 |
| Series | CoolMOS |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 68.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 3.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Rds On (Max) @ Id, Vgs | 41 mOhm @ 33.1A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
| Image |  |
Lowest Price: $0.87
Highest Price: $4.49
1 - 5 of 5 Record(s)
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