Part Number | IPW65R095C7XKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 24A TO247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 590µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2140pF @ 400V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 128W (Tc) |
Rds On (Max) @ Id, Vgs | 95 mOhm @ 11.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247 |
Package / Case | TO-247-3 |
Image |
IPW65R095C7XKSA1
INFIENON
3000
0.09
HONGKONG SINIKO ELECTRONIC LIMITED
IPW65R095C7XKSA1
Infinen
13307
1.6775
Viassion Technology Co., Limited
IPW65R095C7XKSA1
INFLNEON
26000
3.265
Ande Electronics Co., Limited
IPW65R095C7XKSA1
Infineon Technologies A...
250
4.8525
FLOWER GROUP(HK)CO.,LTD
IPW65R095C7XKSA1
INFINEON/IR
23
6.44
ShenZhen HuaYuanShiTong Technology Co.,Ltd