Part Number | IPW65R099C6FKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 38A TO-247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
Gate Charge (Qg) (Max) @ Vgs | 127nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2780pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 278W (Tc) |
Rds On (Max) @ Id, Vgs | 99 mOhm @ 12.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
IPW65R099C6FKSA1
INFIENON
6492
0.86
MY Group (Asia) Limited
IPW65R099C6FKSA1
Infinen
5550
1.5975
Viassion Technology Co., Limited
IPW65R099C6FKSA1
INFLNEON
3362
2.335
TLF ELECTRONICS LTD
IPW65R099C6FKSA1
Infineon Technologies A...
7029
3.0725
Cinty Int'l (HK) Industry Co., Limited
IPW65R099C6FKSA1
INFINEON/IR
9047
3.81
Hongkong Yunling Electronics Co.,Limited