Part Number | IPW65R150CFDAFKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V TO247 |
Series | Automotive, AEC-Q101, CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 22.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2340pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 195.3W (Tc) |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 9.3A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
IPW65R150CFDAFKSA1
INFIENON
3000
1.53
HONGKONG SINIKO ELECTRONIC LIMITED
IPW65R150CFDAFKSA1
Infinen
1000
2.27
MY Group (Asia) Limited
IPW65R150CFDAFKSA1
INFLNEON
2462
3.01
UCAN TRADE (HK) LIMITED
IPW65R150CFDAFKSA1
Infineon Technologies A...
4600
3.75
Hongkong Yunling Electronics Co.,Limited
IPW65R150CFDAFKSA1
INFINEON/IR
30000
4.49
Shenzhen Tongxin Win-Win Technology Co., Ltd