Part Number | IPW65R190C7XKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 20.2A TO247 |
Series | CoolMOS,C7 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 290µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 400V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 72W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 5.7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
IPW65R190C7XKSA1
INFIENON
557
0.49
MY Group (Asia) Limited
IPW65R190C7XKSA1
Infinen
5409
1.04
TLF ELECTRONICS LTD
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INFLNEON
8116
1.59
Hlinsemi Electronics (HongKong) Co., Limited
IPW65R190C7XKSA1
Infineon Technologies A...
9475
2.14
HONGKONG SINIKO ELECTRONIC LIMITED
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INFINEON/IR
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Hongkong Yunling Electronics Co.,Limited