Part Number | IPW65R190CFDAFKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 17.5A TO247 |
Series | Automotive, AEC-Q101, CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 17.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1850pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 151W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.3A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
IPW65R190CFDAFKSA1
INFIENON
7550
0.96
Sun Kai Wah ( H.K. ) Electronics Co.
IPW65R190CFDAFKSA1
Infinen
10
2.1625
Well Sources Technology Co.Ltd
IPW65R190CFDAFKSA1
INFLNEON
1000
3.365
MY Group (Asia) Limited
IPW65R190CFDAFKSA1
Infineon Technologies A...
100000
4.5675
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED
IPW65R190CFDAFKSA1
INFINEON/IR
57482
5.77
Hlinsemi Electronics (HongKong) Co., Limited