Part Number | IPW65R660CFDFKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 700V 6A TO247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 700V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 615pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 62.5W (Tc) |
Rds On (Max) @ Id, Vgs | 660 mOhm @ 2.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
IPW65R660CFDFKSA1
INFIENON
5008
0.65
MY Group (Asia) Limited
IPW65R019C7FKSA1
Infinen
2422
1.2675
Takson Electronics (H.K.) Co., Ltd.
IPW65R041CFD
INFLNEON
5782
1.885
HK TWO L ELECTRONIC LIMITED
IPW65R660CFD
Infineon Technologies A...
850
2.5025
C&G Electronics (HK) Co., Ltd
IPW65R099C6
INFINEON/IR
4534
3.12
Daejon Electronics