Part Number | IPZ40N04S55R4ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 8TDSON |
Series | Automotive, AEC-Q101, OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.4V @ 17µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 48W (Tc) |
Rds On (Max) @ Id, Vgs | 5.4 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TSDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
IPZ40N04S55R4ATMA1
INFIENON
33900
0.91
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPZ40N04S55R4ATMA1
Infinen
12561
2.2325
Viassion Technology Co., Limited
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INFLNEON
10048
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Cinty Int'l (HK) Industry Co., Limited
IPZ40N04S55R4ATMA1
Infineon Technologies A...
4200
4.8775
Hongkong Yunling Electronics Co.,Limited
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Ande Electronics Co., Limited