Part Number | IRF100S201 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 192A D2PAK |
Series | HEXFET, StrongIRFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 192A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 255nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9500pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 441W (Tc) |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 115A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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IRF100S201
INFIENON
10032
1.83
Zhaoxin Electronic Limited
IRF100S201
Infinen
30000
2.3825
Bonase Electronics (HK) Co., Limited
IRF100S201
INFLNEON
2400
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Shenzhen HTIC Electronic Co.,Ltd
IRF100S201
Infineon Technologies A...
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SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
IRF100S201
INFINEON/IR
10000
4.04
Xiefeng (HK) INT'L Electronics Limited