Part Number | IRF1010NSPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 55V 85A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3210pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 180W (Tc) |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 43A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRF1010NSPBF
INFIENON
6782
0.52
HK HEQING ELECTRONICS LIMITED
IRF1010NSPBF
Infinen
2050
1.435
LUCK IN INTERNATIONAL GROUP LIMITED
IRF1010NSPBF
INFLNEON
1949
2.35
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF1010NSPBF
Infineon Technologies A...
7401
3.265
Yingxinyuan INT'L (Group) Limited
IRF1010NSPBF
INFINEON/IR
9634
4.18
CIS Ltd (CHECK IC SOLUTION LIMITED)