Part Number | IRF1010ZL |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 55V 75A TO-262 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2840pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IRF1010ZL
INFIENON
347
0.58
Cinty Int'l (HK) Industry Co., Limited
IRF1010ZL
Infinen
5885
1.965
Yingxinyuan INT'L (Group) Limited
IRF1010ZL
INFLNEON
7150
3.35
N&S Electronic Co., Limited
IRF1010ZL
Infineon Technologies A...
1079
4.735
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF1010ZL**
INFINEON/IR
753
6.12
N&S Electronic Co., Limited