Part Number | IRF1310NSTRLPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 42A D2PAK |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 160W (Tc) |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 22A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRF1310NSTRLPBF
INFIENON
180
0.49
SUNTOP SEMICONDUCTOR CO., LIMITED
IRF1310NSTRLPBF
Infinen
6400
1.1875
Shenzhen HTIC Electronic Co.,Ltd
IRF1310NSTRLPBF
INFLNEON
800
1.885
ANCHIP TECHNOLOGY CO., LIMITED
IRF1310NSTRLPBF
Infineon Technologies A...
25739
2.5825
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
IRF1310NSTRLPBF
INFINEON/IR
10000
3.28
Xiefeng (HK) INT'L Electronics Limited