Part Number | IRF1310NSTRRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 42A D2PAK |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 160W (Tc) |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 22A, 10V |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRF1310NSTRRPBF
INFIENON
1033
1.63
HK HEQING ELECTRONICS LIMITED
IRF1310NSTRRPBF
Infinen
5838
2.925
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF1310NSTRRPBF
INFLNEON
1257
4.22
N&S Electronic Co., Limited
IRF1310NSTRRPBF
Infineon Technologies A...
7154
5.515
N&S Electronic Co., Limited
IRF1310NSTRRPBF
INFINEON/IR
7436
6.81
HK TWO L ELECTRONIC LIMITED