Infineon Technologies AG

Description

Jun 19, 2012 IRF1404Z /S/LPbF. 2 www.irf.com. Electrical Characteristics @ TJ = 25 C (unless otherwise specified). Parameter. Min. Typ. Max. Units. V(BR) Oct 10, 2003 Seventh Generation HEXFET Power MOSFETs from. International Rectifier utilize advanced processing techniques to achieve extremely low IRF1404Z . 40V. 190A. 3.7 mOhm. 100 nC. TO-220AB. IRFP4004. 40V. 350A. 1.7 mOhm. 220 nC. TO-247AC. IRFU4105Z. 55V. 30A. 24.5 mOhm. 18 nC. I-Pak. Specifically designed for Automotive applications, this HEXFET . Power MOSFET utilizes the latest processing techniques to achieve extremely low 5 mawmcm 3 A mmm mmwm is mom? iumnt - - 136 vsn Diode Forward Voltage - - u; v rJ - 25 C, is - 34A. ves - w @ in Reverse Recovery Tima