Part Number | IRF1407S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 75V 100A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 250nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5600pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
Rds On (Max) @ Id, Vgs | 7.8 mOhm @ 78A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRF1407S
INFIENON
6000
0.98
Shenzhen Qiangneng Electronics Co., Ltd.
IRF1407S
Infinen
46000
2.405
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF1407S
INFLNEON
2000
3.83
Nosin (HK) Electronics Co.
IRF1407S
Infineon Technologies A...
45500
5.255
Analog Technology Limited
IRF1407S
INFINEON/IR
49850
6.68
Z.H.T TECHNOLOGY HK LIMITED