Infineon Technologies AG

Description

Aug 21, 2001 RDS(on). ID. IRF150 . 100V 0.055 38A. For footnotes refer to the last page. REPETITIVE AVALANCHE AND dv/dt RATED. IRF150 . HEXFET. Jul 15, 2002 Page 1. IRFP150N. HEXFET Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing Page 1. L2 ? d. D1. L1. 220uH. IRF150 . M2. +. -. V1. 12 armature field pwm drive drive at 1kHz big schottky. inductive load circuit with an arbitrary number of paralleled IRF150 HEXFET Power MOSFETs. I. INTRODUCTION. Concepts and design aids are presented for Page 1. Document Number: 91203 www.vishay.com. S11-0446-Rev. B, 14-Mar- 11. 1. This datasheet is subject to change without notice. THE PRODUCT