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Description
IRF2804 . IRF2804S. IRF2804L. HEXFET Power MOSFET. VDSS = 40V. RDS( on) = 2.0m . ID = 75A. 08/27/03 www.irf.com. 1. AUTOMOTIVE MOSFET. Dec 5, 2010 IRF2804 /S/LPbF. 2 www.irf.com. Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax Jan 6, 2005 Description. Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to Jan 28, 2002 VGS. Gate-to-Source Voltage. 20. V. EAS. Single Pulse Avalanche Energy . 250. mJ. IAR. Avalanche Current . 28. A. EAR. Repetitive IRF2804 . 40V. 270A. 2.3 mOhm. 160 nC. TO-220AB. IRFB3004. 40V. 340A. 1.75 mOhm. 160 nC. TO-220AB. IRF4104. 40V. 120A. 5.5 mOhm. 68 nC. TO-220AB.
| Part Number | IRF2804 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 40V 75A TO-220AB |
| Series | HEXFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3 mOhm @ 75A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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