Infineon Technologies AG

Description

IRF3205 . HEXFET Power MOSFET. 01/25/01. Absolute Maximum Ratings. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 0.75. R CS. Nov 3, 2004 IRF3205S /LPbF. 2 www.irf.com. S. D. G parameter. Min. Typ. Max. Units. Conditions. IS. Continuous Source Current. MOSFET symbol. IRF3205 . HEXFET Power MOSFET www.artschip.com. 1. Advanced Process Technology. Ultra Low On-Resistance. Dynamic dv/dt Rating. 175 Oct 12, 2011 ID = 75A. This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. May 1, 2009 example, a TO-220 package with an IRF3205 die, which has three 0.38 mm (15 mils) diameter source wire bonds, could carry 120 Amperes