Description
DATASHEET 05/08/08. IRF3707ZPbF . IRF3707ZSPbF. IRF3707ZLPbF. HEXFET Power MOSFET. Notes through are on page 12. Applications. Benefits l Low RDS(on) at IRF3707ZPBF . 30. 11.9. 11. 6.2. IRF8707PBF. 40. 1.6. 320. 170. IRF2804S- 7PPBF. 40. 1.7. 350. 220. IRFP4004PBF. 40. 2.0. 270. 160. IRF2804SPBF. 40. 2.3. May 28, 2004 IRF3707ZPbF . IRF3707ZSPbF. IRF3707ZLPbF. HEXFET. . Power MOSFET. Notes through are on page 12. Applications. Benefits.
Part Number | IRF3707ZPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 59A TO-220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.25V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1210pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 57W (Tc) |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 21A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
IRF3707ZPBF
INFIENON
110
1.82
KDH SEMICONDUCTOR CO., LIMITED
IRF3707ZPBF.
Infinen
25119
2.74
N&S Electronic Co., Limited
IRF3707ZPBF
INFLNEON
2300
3.66
HK KK Int'l Co.,Limited
IRF3707ZPBF
Infineon Technologies A...
9719
4.58
Yingxinyuan INT'L (Group) Limited
IRF3707ZPBF
INFINEON/IR
1971
5.5
ATLANTIC TECHNOLOGY LIMITED