(5/5) based on 16 customer reviews
Description
Datasheet TJ , TSTG. Junction and Storage Temperature Range. -55 to + 150. C www. irf . com. 1. 12/9/04. IRF3711 . IRF3711S . IRF3711L . SMPS MOSFET . HEXFET. . www. irf .com. 1. 10/30/03. IRF3711Z . IRF3711ZS . IRF3711ZL . HEXFET. . Power MOSFET . Notes through are on page 12. Applications. Benefits. www. irf .com. 1. 12/13/04. IRFR3711ZPbF . IRFU3711ZPbF . HEXFET. . Power MOSFET . Notes through are on page 11. Applications. Benefits l Very Low www. irf .com. 1. 1/27/04. IRFR3711 . IRFU3711 . SMPS MOSFET . HEXFET. . Power MOSFET . VDSS. RDS(on) max. ID. 20V. 6.5m . 110A . Notes through Oct 7, 2003 IRF3711ZC /S/L. 2 www. irf .com. S. D. G. Static @ TJ = 25 C (unless otherwise specified). Parameter. Min. Typ. Max. Units. BVDSS.
| Part Number | IRF3711 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 20V 110A TO-220AB |
| Series | HEXFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2980pF @ 10V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| Rds On (Max) @ Id, Vgs | 6 mOhm @ 15A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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