Part Number | IRF3711SPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 20V 110A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2980pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRF3711SPBF
INFIENON
5095
0.35
CHIPSMALL LIMITED
IRF3711SPBF
Infinen
149
1.265
Bonase Electronics (HK) Co., Limited
IRF3711SPBF
INFLNEON
8735
2.18
LUCK IN INTERNATIONAL GROUP LIMITED
IRF3711SPBF
Infineon Technologies A...
3593
3.095
ALPINE ELECTRONICS LTD
IRF3711SPBF
INFINEON/IR
1100
4.01
MY Group (Asia) Limited