Part Number | IRF3711STRLPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 20V 110A D2PAK |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2980pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRF3711STRLPBF
INFIENON
4647
0.76
HK HEQING ELECTRONICS LIMITED
IRF3711STRLPBF
Infinen
55100
2.0175
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF3711STRLPBF
INFLNEON
4647
3.275
MAXTRONIC GLOBAL LIMITED
IRF3711STRLPBF
Infineon Technologies A...
14980
4.5325
NEW IDEAS INDUSTRIAL CO., LIMITED
IRF3711STRLPBF
INFINEON/IR
9782
5.79
Nosin (HK) Electronics Co.