(4/5) based on 20 customer reviews
Description
DATASHEET www.irf.com. 1. 2/20/04. IRF3717 . HEXFET Power MOSFET. Notes through are on page 10. Benefits l Ultra-Low Gate Impedance l Very Low RDS(on). SBM835L. 3872 TA03a. RUN/SS. 11k. 4.7M. 11.8k. 1%. 107k. 1%. COUT1: TAIYO YUDEN TMK325B7226MM. L1: TOKO D124C 892NAS-3R3M. M1: IRF3717 . sURFACE MOUNT PACkAGEs 20 - 30V. Part Number. Voltage. ID @ TC = 25 C. RDs(on) max @ 10V. QG typ @ 10V. Package. IRF3717 . 20V. 20A*. 4.4 mOhm. SBM835L. 38721 TA03a. RUN/SS. 11k. 4.7M. 11.8k. 1%. 107k. 1%. COUT1: TAIYO YUDEN TMK325B7226MM. L1: TOKO D124C 892NAS-3R3M. M1: IRF3717 . SBM835L. 3872 TA03a. RUN/SS. 11k. 4.7M. 11.8k. 1%. 107k. 1%. COUT1: TAIYO YUDEN TMK325B7226MM. L1: TOKO D124C 892NAS-3R3M. M1: IRF3717 .
| Part Number | IRF3717 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 20V 20A 8-SOIC |
| Series | HEXFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2890pF @ 10V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 4.4 mOhm @ 20A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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